Development of high efficiency mono-crystalline silicon solar cells: Optimization of rear local contacts formation on dielectrically passivated surfaces

An integration process was developed for the fabrication of rear passivated point contact solar cells achieving 19.36% conversion efficiency by using 156×156mm, pseudo square, p-type single crystalline silicon wafers. This is a significant improvement when compared to unpassivated, full area aluminum back surface field solar cells, which exhibit only 18.64% conversion efficiency on the same wafer type. The rear surface was passivated with a Al 2 O 3 layer and a SiN X capping layer. The thicknesses of individual films were optimized to obtain maximum minority carrier lifetimes. The rear surface contact pattern was created by laser ablation and the contact geometry was optimized to obtain voids free contact filling resulting in a uniform back surface field. Internal quantum efficiency and reflectance measurement show significant improvement in rear passivated cells in the infrared wavelength region in comparison to reference cells. The rear surface internal reflectivity for the passivated cell was 93% while that for the reference cell was only about 73%. The rear surface recombination velocity for the rear passivated cell was about 52 cm/s while that for the reference cell was about 300 cm/s. The efficiency gain in rear passivated cells over the reference cells is mainly due to improved short circuit current and open circuit voltage. However, rear passivated solar cells show lower fill factors due to increased series resistance.