Old Web
English
Sign In
Acemap
>
Paper
>
Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE
Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE
2019
Kiichi Sato
Takashi Fujii
Tsutomu Araki
Shinichiro Mori
Kotaro Ishiji
Toshiyuki Iwamoto
Ryuichi Sugie
Keywords:
Ion implantation
Optoelectronics
Silicon carbide
Wafer
Terahertz radiation
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]