Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10 2 ) on/off window, tunable μA-range switching current and excellent variability

We demonstrate an advanced a-VMCO nonfilamentary resistive switching memory cell with self-rectifying, self-compliant, forming-free and analog behavior. A BEOL-compatible process yields devices with excellent device-to-device variability, down to 40nm size. Detailed analysis of the a-Si/TiO 2 interface enables understanding the barrier resistance modulation, engineered for wider on/off window and current reduction, while preserving an excellent variability. Inner-interface engineered devices have an on/off window well above 10 2 and reset switching currents of down to ∼1uA for 40nm-size cells, scaling with size, without compromising reliability. Furthermore, vertical stack scaling allows to reduce the operating voltages, while preserving or tuning device figures.