Narrow-band photoluminescence at room-temperature in amorphous SiCx:H film

Abstract We report strong narrow-band photoluminescence at room temperature in amorphous SiC x :H films synthesized by means of high-density reactive plasma. The emission energy is found to remain constant with varying nanoparticle sizes. Detailed bond configuration analysis shows that the PL intensity strongly depends on the density of nanoparticle and Si–C bonds. On the basis of a variety of bond characterizations, the origin of photoluminescence is explained as two separated processes: photoexitation in Si nanoparticles embedded in amorphous SiC matrix and photoemission in SiC matrix or at Si/SiC interface. The contribution from the passivation behavior of amorphous SiC on Si nanoparticle surface is also proposed.