Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

In this paper, we presented a comparative study of the HBT reliability of scaled 200GHz SiGe:C quasi self-aligned HBTs integrated in a 0.13mum BiCMOS process with airgap DTI. The influence of scaling and airgap DTI under the three stress conditions (reverse emitter-base current stress, very high forward current stress and mixed-mode stress) on the reliability performance is reported. It was demonstrated that for all three stress regimes, only limited increase in the base current degradation was measured and no change in the collector current has been observed. Despite the lateral scaling of the device and higher self-heating due to the airgap DTI, the base current degradation remains limited under the specified stress conditions