P‐6: Analysis of Microscopic Crystallization of Two‐Shot SLS Process and Its Dependence on Performance of LTPS Devices

The dependence of LTPS devices on the microscopic crystallization transients of two shot sequential lateral solidification (TS-SLS) process has been analyzed by the phase field modeling and experiments. The results indicate that the performance of TS-SLS LTPS devices mainly depends on the inter-grain crystallinity during solidification instead of the existence of grain boundaries. Unexpectedly, modeling shows that the crystallinity around the grain boundary is relatively better, while the inter-grain overlap between two shots is the weak point. These evidences strongly suggest that the drain region of TS-SLS-based thin film transistors (TFTs) should keep away from the overlap between two shots for better reliability of circuits.