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In0.52Al0.48As/In0.53Ga0.47As higfets using novel 0.2 μm self-aligned T-gate technology
In0.52Al0.48As/In0.53Ga0.47As higfets using novel 0.2 μm self-aligned T-gate technology
2020
Yi-Jen Chan
Dimitris Pavlidis
Tim Brock
Keywords:
Optoelectronics
Materials science
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