Influence of In substitution and plastic deformation on AsGa-related photoluminescence in GaAs

Abstract Low-temperature photoluminescence experiments have been carried out on semi-insulating GaAs crystals undoped or containing ∼5 × 1019 In atoms cm−3. A broad band peaking around 0·8eV is observed which is generally related to the antisite defect AsGa. The effect of In substitution or plastic deformation is to shift this band towards higher energies by 10–25 meV. This positive energy shift is quantitatively accounted for by considering the stress fields induced by the incorporation of indium or the creation of dislocations.