Formation method of semiconductor structure

The present invention provides a formation method of a semiconductor structure. The formation method of the semiconductor structure comprises: providing a semiconductor substrate which has a protruded fin; forming sacrificial layers which are configured to cover the side wall and the top surface of the fin, wherein the sacrificial layers include first silicon oxide layers located at the side wall and the top surface of the fin, an amorphous silicon layers located at the surfaces of the first silicon oxide layers and second silicon oxide layers located at the surface of the amorphous silicon layers; performing ion implantation of the fin, and injecting foreign ions in the fin to form a well region; and removing the sacrificial layers. The formation method of a semiconductor structure is able to prevent a fin from etching and damaging when sacrificial layers are removed while preventing the fin from ion implantation damaging.