Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping

Abstract In this study, we demonstrated a far ultraviolet-C (far-UVC) emitter using Al0.73Ga0.27N/AlN multiple quantum wells (MQWs) by carbon nanotube based cold cathode electron-beam (C-beam) excitation. The Al0.73Ga0.27N/AlN MQW structure was grown on AlN/sapphire by high-temperature metal-organic chemical vapor deposition. The large-area far-UVC emission (276 mm2) was investigated using C-beam, as a function of anode voltage (VA) and anode current (IA), and the near-band-edge emission of Al0.73Ga0.27N/AlN MQWs was observed at a peak wavelength of 233 nm, with a VA of 4 kV, an IA of 0.5 mA. The results suggest that the large-area C-beam pumped far-UVC emitter could be a promising sterilization light source.