Photoluminescence study of (Er3+ + Yb3+) doped gallium nitride layers fabricated by magnetron sputtering

Erbium (Er 3+ ) and Ytterbium (Yb 3+ ) ions doped Gallium Nitride (GaN) layers were deposited by RF magnetron sputtering. Deposition was carried out in Ar + N 2 gas mixture using Ga and Ga 2 O 3 target as the source of Gallium. For the erbium and ytterbium doping, the Er 2 O 3 , Yb 2 O 3 pellets, or Er and Yb powder were laid on the top of the Ga 2 O 3 target. The GaN layers were deposited on silicon and Corning glass substrates. The properties of the GaN layers were investigated by using X-ray diffraction, Raman spectroscopy, absorption spectra and photoluminescence spectra. Prism coupling mode spectroscopy was used to measure the waveguiding properties. The composition of the fabricated samples was determined by using nuclear chemical analysis as Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA). The results of the experiments were evaluated in terms of the relations between the technology approaches and the composition and luminescence properties of the fabricated thin films. Up to now the best results, which can be utilized for a structure operating at 1550 nm (when pumped at 980 nm), were obtained when using (erbium plus ytterbium) metallic powder and Corning glass as the substrate for the deposition.