Simulation and Verification of Heterojunction AlGaAs/GaAs PIN Diode

A heterojunction PIN Diode in which an I-layer of GaAs is placed between P-layer of Al 0.11 Ga 0.89 As and N-layer of GaAs is discussed. The performance of a PIN diode depends to a large extent on the semiconductor material and the geometry of the chip, particularly the intrinsic layer [1]. In this paper, the PIN switching diode model is established by Sentaurus TCAD software and the simulation of different thickness of I- layer is carried out to find the most optimal thickness of I-layer. I-V characteristics and the S-parameters of the PIN device are also measured to verify the experiments.