INVESTIGATION OF DAMAGE-INDUCED DEFECTS IN SILICON BY TCT

Abstract Neutron- and 60 Co gamma-irradiated silicon detectors have been investigated using time-resolved current transients (TCT) induced by nanosecond laser pulses. Measurements were performed as a function of operating temperature (100–300 K) and bias voltage. Illumination was done on both the junction and ohmic side, allowing the investigation of the free charge carrier transport for electrons, respectively, holes separately. In this way, temperature-dependent trapping and detrapping effects as well as related electric field transformations have been studied and enable us to extract relevant defect parameters. Results achieved for the damaged detectors are presented and discussed in comparison with DLTS data.