Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window

This paper elucidates the impact of pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of proposed SOIJLT is compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (g m ), transconductance generation factor (TGF), output conductance (g d ), output resistance (r 0 ), intrinsic gain (A V ), and cut-off frequency (f T ) have improved for DMG PD-SOIJLT as compared to DMG SOIJLT. Improvements are also found in OFF-state leakage current (I OFF ) and ON-OFF current ratio (I ON /I OFF ) for DMG PD-SOIJLT. The maximum values of g m , r 0 , and f T are improved by 4.46 times, 3.84 times, and 3.85 times respectively, and A V is improved by 21.07 times in ON-state, as compared to DMG SOIJLT. The device simulation and parameter extractions have been carried out using SILVACO ATLAS-2D  device simulator.