SEB occurrence in a VIP: Influence of the epi-substrate junction

E. Lorfevre,C. Sudre,C Dachs,C. Detcheverry,J.-M. Palau,J. Gasiot,M.-C. Calvet,J. Garnier,R. Ecoffet

SEB occurrence in a VIP: Influence of the epi-substrate junction

1997

E. Lorfevre
C. Sudre
C Dachs
C. Detcheverry
J.-M. Palau
J. Gasiot
M.-C. Calvet
J. Garnier
R. Ecoffet

Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.

Keywords:

Physics
Optoelectronics
Electronic circuit
Substrate (chemistry)
Power MOSFET
Ion
Electronic engineering
Phenomenon
power integrated circuits
heavy ion

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