Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.