Hetero-junction-structured crystalline silicon solar cell with intrinsic layer and preparation method thereof

The invention discloses a hetero-junction-structured crystalline silicon solar cell with an intrinsic layer and a preparation method thereof. The crystalline silicon solar cell comprises a crystalline silicon substrate, and upper and lower amorphous alumina passivation dielectric layers; a p-type doped amorphous silicon carbon film and a TCO (Transparent Conductive Oxide) layer are arranged on the amorphous alumina passivation dielectric layer on the upper surface; an n-type doped amorphous silicon or micro-crystalline silicon film and a TCO layer are arranged below the amorphous alumina passivation dielectric layer on the lower surface; and the TCO layers on the upper and lower surfaces are both connected with a metal gate electrode. The preparation method comprises the steps of preparing the amorphous alumina passivation dielectric layers: preparing the ultra-thin amorphous alumina passivation dielectric layers simultaneously after the crystalline silicon substrate is acidized; and then preparing the p-type amorphous silicon carbon and the n-type amorphous silicon or micro-crystalline silicon and the TCO respectively to form the hetero-junction cell. The hetero-junction-structured crystalline silicon solar cell and the preparation method thereof have the advantages of simple process, good surface passivation performance of the crystalline silicon, good UV (ultraviolet) radiation-resistant performance, fully utilization of the sunlight and the like.