Leakage current correction in quasi-static C-V measurements
2004
The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
10
Citations
NaN
KQI