Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene

Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Here we show that fully turbostratic multilayer graphitic microstructures combine the high charge carrier mobilities necessary for advanced electronic and spintronic devices with the robustness of graphitic structures. Structural characterization of disk-shaped graphitic microstructures using Raman spectroscopy and Transmission Electron Microscopy (TEM) reveals Moir\'e and diffraction patterns corroborating their turbostratic nature. Electronic transport characterization yields reproducible high mobilities > 105 cm^2(Vs)^(-1) independent of the disks thickness, which is a direct consequence of the electronic decoupling induced by the turbostratic stacking.