Optimal laser wavelengths for transient ionizing response simulation of CMOS SOI devices with 0.24 μm design rules

S.B. Shmakov,P. K. Skorobogatov,Anastasiya V. Ulanova,Anna B. Boruzdina,G. G. Davydov,A.Y. Nikiforov

Optimal laser wavelengths for transient ionizing response simulation of CMOS SOI devices with 0.24 μm design rules

2017

S.B. Shmakov
P. K. Skorobogatov
Anastasiya V. Ulanova
Anna B. Boruzdina
G. G. Davydov
A.Y. Nikiforov

The optimal laser wavelengths for transient ionizing response due to dose rate effect simulation of 0.24 um CMOS SOI devices was found to be 0.56 um for top side irradiation and 1.06 μm for backside irradiation.

Keywords:

Ionizing radiation
Computer science
Electronic engineering
Silicon on insulator
Irradiation
Laser
Microelectronics
Semiconductor laser theory
Integrated circuit
CMOS
cmos soi
Wavelength
Optoelectronics

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