Structural and electronic properties of a single Si chain doped zigzag AlN nanoribbon

Abstract The first-principles projector-augmented wave (PAW) potentials within the density function theory (DFT) framework have been used to determine the geometry structures and electronic properties of the zigzag edge AlN nanoribbons (ZAlNNRs) doped with a single Si chain under generalized gradient approximation (GGA). The average Al–Si, Si–Si, Al–N, Si–N, Al–H and N–H bond lengths are 2.39, 2.16, 1.83, 1.74, 1.59 and 1.03 A, respectively. Pure 7-ZAlNNR is an indirect semiconductor with a large band gap of 2.235 eV, while a semiconductor to metal transformation is taken place after a single Si chain substituting for a single Al–N chain at various positions. In pure 7-ZAlNNR, the HVB and LCB are mainly attributed to the edge N and Al atoms, respectively, while in a single Si chain substituting doped 7-ZAlNNR, the HVB and LCB are mainly attributed to the Si atoms. The Al–N, Al–H and Al–Si bonds are ionic bond, the Si–Si and Si–H bonds are covalent bond, the N–H and N–Si bonds are covalent bond modified ionic bond.