Ion sensitive sensor and manufacturing method thereof

The invention relates to an ion sensitive sensor comprising a silicon oxide layer and a silicon substrate which are vertically stacked, a source electrode and a drain electrode arranged on the silicon oxide layer at an interval, and a graphene layer arranged on the surface of the silicon oxide layer and between the source electrode and the drain electrode; wherein the graphene layer is respectively connected with a gear shaping part of the source electrode and a gear shaping part of the drain electrode, and the surface layer of the graphene layer is penetrated with metal oxide particles; the ion sensitive sensor also comprises a micro fluidic channel layer which is erected on the gear shaping part of the source electrode and the gear shaping part of the drain electrode, and the gear shaping part of the source electrode and the gear shaping part of the drain electrode are coated with insulating layers; the micro fluidic channel layer is matched with the graphene layer to form a cavity for accommodating an object for measurement, and is opened with through holes; and suspended grid electrodes are inserted into the through holes and extend into the cavity. The ion sensitive sensor has a structure which is similar to a field effect transistor, and has advantages of high flux, high sensitivity, short response time and the like.