Plasma Wave HEMTs for THz applications

New THz chip solid-state detectors and sources are waited for many applications. The idea of new sources and detectors, based on the oscillations of bidimensional plasma, was theoretically and experimentally demonstrated. We present technological process of nanometric devices dedicated to THz emission. In this structure, a MIM gate-source capacitance is integrated to HEMT to achieve the boundary condition of plasma wave generation and to keep possible the gate biasing, necessary for frequency tuning. High electron mobility material like InAlAs/GaInAs heterostructure is used otherwise the plasma wave is dumped by electron scattering. Electrical and THz measurements are realized.