Lateral field effect in focused‐ion‐beam written in‐plane‐gated systems
2008
We define one dimensional channels and adjacent In‐Plane‐Gates in a single step preparation by linewise insulating an Al0.3Ga0.7As/GaAs n‐type heterostructure. Channel and gates consist of the same electronic layer, which leads to lateral electric field effect with high flexibility in microstructure design.
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