Ultra Thin Silicon Substrate for Next Generation Technology nodes IpO-P-071

Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOl (UTSOl) wafers. These 300mm ultra-thin SOl layer are now available with silicon target thickness at 12 nm, controlled within a few angstrom range from Wafer to Wafer to Transistor level. Ultra- Thin SOl & BOX (UTBOX) substrates with 25 to 10 nm BOX are developed in parallel to UTSOI and will show similar SOl layer uniformity.