Scanning ion deep level transient spectroscopy

Abstract We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.