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19nm64Gbit多値(2bit/cell)NANDフラッシュメモリの開発(依頼講演,メモリ(DRAM,SRAM,フラッシュ,新規メモリ)技術)
19nm64Gbit多値(2bit/cell)NANDフラッシュメモリの開発(依頼講演,メモリ(DRAM,SRAM,フラッシュ,新規メモリ)技術)
2012
noboru sibata
kazusige kanda
syun ki hisada
kokumei isobe
gaku satou
ari i simizu
takahiro simizu
takahiro sugimoto
tomohiro kobayasi
kazuko inutuka
tyoku akira kanagawa
yasuyuki kazitani
takesi ogawa
jun nakai
seimei iwasa
masatugu kozima
tosihiro suzuki
yuuya suzuki
sintarou sakai
tomo si fuzimura
yuuko utunomiya
tosifumi hasimoto
makoto o mei
naoki kobayasi
izumi takasi inagaki
yuuki matumoto
satosi inoue
yosihisa suzuki
yasuhiko honda
junzi musya
mitio nakagawa
juu syou honma
naofumi yasuhiko
kati oyanagi
masahiro yosihara
kazumi i nou
mituhiro noguti
teruhiko kamei
yousuke katou
singo zaitu
hiroaki nasu
takuya ariki
Hardwell Chibvongodze
hikari yasu watanabe
naoki ookuma
ryuuzi yamasita
Guirong Liang
Gertjan Hemink
Farookh Moogat
Cuong Trinh
masaaki azumaya
Tuan Pham
kazuhisa kanazawa
Keywords:
Parallel computing
Static random-access memory
Computer science
Dram
Embedded system
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