Silicon precursors for gate dielectric and electrode applications

Hafnium oxide and hafnium silicate films were deposited using tetrakis(diethylamino) hafnium (TDEAH) and tetrakis(pyrrolidinyl) silicon (TPS). The films were deposited between 350 °C to 450 °C. Increasing the concentration of TPS in the process gas, relative to the concentration of TDEAH, resulted in films with higher silicon incorporation and decreased crystallinity. Within the range conditions examined, hafnium silicate films composed of up to 70% silicon were deposited.