Preparation controllable inter indium tin solder interconnect metal compound

The present invention discloses a method for preparing controllably interconnected between one tin indium solder metal compound, belonging to the micro interconnect pads prepared and the field of semiconductor device manufacturing process structure. The method is a copper base lead-free solder and indium tin oxide as raw materials, an intermetallic compound or a textured topography in different crystal growth orientation controlling prepared by the reaction of the substrate surface, to achieve different types of metal compound by controlling the aging temperature and time of each other conversion, thereby changing the micro-mechanical interconnect pads, electrical, magnetic, and corrosion performance. Diffusion mechanism of the present invention, reaction of the metal element and the solder pads are grown in the liquid reaction mechanism solder interface and a solid state reaction of the compound-based intermetallic compound prepared controllable morphology and type of realization, the method is simple, easy to operate, It provides a practical method for the improved performance of joints micro device.