A new n-level high voltage inversion system

This paper deals with a new multilevel high-voltage source inverter with gate-turn-off (GTO) thyristors. Recently, a multilevel approach seemed to be the best suited for implementing high-voltage power conversion systems because it leads to a harmonic reduction and deals with safe high-power conversion systems independent of the dynamic switching characteristics of each power semiconductor device. A conventional multilevel inverter has some problems; voltage unbalance between DC-link capacitors and larger blocking voltage across the inner switching devices. To solve these problems, the novel multilevel inverter structure is proposed.