Silicon-oxide-high-κ-oxide-silicon memory using a high-κ Y2O3 nanocrystal film for flash memory application
2009
In this article, the authors developed a silicon-oxide-high-κ-oxide-silicon (SOHOS) memory structure using a high-κ Y2O3 nanocrystal film as the charge-trapping layer for flash memory applications. From x-ray photoelectron spectroscopic and atomic-force microscopy analyses, they found that the Y2O3 nanocrystal layer formed after O2 and N2O annealing. When using the channel hot-electron injection for charging and the band-to-band hot hole for discharging, the high-κ Y2O3 SOHOS memory devices prepared under the N2O gas annealing exhibited large threshold-voltage shifting (memory window of ∼3V), superior endurance characteristics (program/erase cycles of up to 105), and excellent data retention (charge loss of ∼7.5% measured time up to 104s and at room temperature). These results indicate the higher probability of charge-carrier trapping in the Y2O3 film.
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