Cross-point device using In-Ga-Zn-O semiconductor for synapse element in neural network
2017
We have developed a cross-point device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. Horizontal 80 and vertical 80 metal lines make 6400 cross-point synapse integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning.
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