Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity

1993 
An investigation was made of the properties of gallium arsenide grown by molecular beam epitaxy at temperatures 150-250 °C (LT-GaAs). This material contains up to 1.5 at. % of excess arsenic, which forms clusters of nanometer size when the material is annealed. The concentration dependences of this excess arsenic and of the clusters and their size on sample preparation conditions were determined. The LT-GaAs films were found to have a high resistivity, but investigations of the microwave absorption as a function of a weak magnetic field revealed a characteristic signal typical of a superconducting phase. This signal was obviously associated with the superconductivity of the arsenic clusters in the LT-GaAs film and not due to the superconductivity of indium clusters in the substrate, as postulated earlier
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