Hydrogenation effect in an n‐channel metal‐oxide‐semiconductor field‐effect transistor

The effects of hydrogen plasma exposure on the characteristics of an n‐channel metal‐oxide‐semiconductor field‐effect transitor are studied. The helium plasma gives almost no changes in maximum transonductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and increases subthreshold slope. These results indicate that the excess interface traps are generated by hydrogenation, which is also confirmed by quasi‐static capacitance‐voltage analysis.