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Characteristics of a-Si TFTs Using Thermal-CVD-SiO2/PECVD-SiNx Double Layered Gate Dielectrics
Characteristics of a-Si TFTs Using Thermal-CVD-SiO2/PECVD-SiNx Double Layered Gate Dielectrics
1990
Kaichi Fukuda
Nobuki Ibaraki
Keywords:
Dielectric
Nanotechnology
Analytical chemistry
Plasma-enhanced chemical vapor deposition
Materials science
thermal cvd
double layered
Optoelectronics
Correction
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