Method for preparing silicon oxide nano island array by precise positioning

The invention relates to a method for preparing a silicon oxide nano island array by precise positioning. The method is characterized in that a sacrificial layer corrosion technology is utilized, and contact exposure photoetching and wet-process corrosion processes are utilized, that is, the product is prepared by carrying out three times of photoetching process and three times of BOE corrosion process. According to the method, a unique design is combined on the basis of a traditional method 'from top to bottom'; direct writing is carried out without the help of an electron beam or a focusing ion beam; and the precise positioning machining and manufacturing of the silicon oxide nano island array can be realized by only combining the contact exposure technology with the precisely-controlled sacrificial layer corrosion technology. The method is skillful in design, simple in process, low in manufacturing cost, and easy to manufacture in batches.