Light-emitting flip-chip semiconductor device of nitride

Light-emitting flip-chip semiconductor device of nitride (20, 50, 60), comprising: p-type and n-type semiconductor layers (24, 26, 54, 56); an active layer (25, 55) disposed between the p-type and n-type semiconductor layers (24, 26, 54, 56) is formed; an ohmic contact layer (27a, 57a), which is on the p-type semiconductor layer (26, 56) formed of nitride; a light transmitting conductive oxide film (27b, 57b) is formed on the ohmic contact layer (27a, 57a); a highly reflective metal layer (27c, 57c), the transmitted light on the conductive oxide film (27b, 57b) is formed, characterized in that they (57b 27b) and the highly reflective metal layer (27c, 57c) is formed, having a diffusion preventing layer, the transmitting between the light conducting oxide layer, wherein the diffusion preventing layer is made of a material which is selected from a group, the, Mo, V, W and alloys of these materials with each other is composed of Cu, and the alloy Ti-W may contain.