Defect levels of proton-irradiated silicon with a dose of 3.6 × 1013cm−2

Abstract Deep levels created in n-epitaxial silicon by 1.85 MeV proton implantation at a dose of 3.6 × 10 13 H + cm −2 have been investigated by Deep Level Transient Spectroscopy (DLTS). Following irradiation, three hole traps and seven electron traps, two of these for the first time, are observed. They are considered to be (multi-) vacancy- and/or impurity-related defects. After subsequent annealing at 400°C for 5 min, only five electron traps and four hole traps are found. Capture cross-sections for all levels have been determined and their respective identities have been discussed. The evolution of the spectra due to the annealing and profiles of the levels have been studied. It is suggested, that the level E C − 0.30 eV is vacancy related.