P-11: Electrical properties and stability of dual-gate coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistor

electrical characteristics and stabilities of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a-IGZO TFT showed an excellent electrical performance with the sub- threshold swing of 99 mV/dec, the mobility of 15.1 cm 2 /V·s and the on-off ratio of 10 9 . Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.