Investigation of the Occupation Function of Localized States in Amorphous Semiconductors Under Infrared-Light Excitation

The occupation function of localized states in a-Si:H under i.r. light excitation is directly calculated from the observed infrared-stimulated photocurrent spectra. The calculated occupation function in dual-beam and one-beam excitation cases are compared. The overshot phenomenon in the dual-beam experiment is explained as the result of the difference of the initial condition between two cases when i.r. light is turned on. In the dual-beam excitation case, at the beginning, in the upper part of the band gap, there are many trapped electrons to be excited into the conduction band to cause the photoconductivity overshot.