Silicide Ni2Si formation in a-Si: H

Abstract The rate K of Ni 2 Si formation in a-Si: H films of various Hydrogen concentrations was measured. We have found that K 2 is proportional to the time and that the activation energy E a is strongly correlated to the structure parameter R and to the Hydrogen concentration C H in the film. C H is very small in the Ni 2 Si and Ni layers but does not change in a-Si: H itself.