Field-induced charge accumulation in V-groove quantum wires

Inducing charge into V-groove quantum wires via a field effect from a back gate is investigated by solving the Laplace and Poisson equations analytically, using a sequence of three conformal mapping transformations. These solutions show that the V-groove geometry is much more effective than the corresponding planar geometry. Induced charge densities of order 108 m-1 are well within present growth and processing capabilities and offer the prospect of clean, high-conductivity devices without the need for modulation doping.