Defect-initiated atomic emissions from semiconductor surfaces induced by laser irradiation: electronic cleaning of defects on surfaces

Abstract We compare the emission of Si atoms from Si (100) surfaces and of Ga atoms from GaAs (110) and GaP (110) surfaces induced by irradiation with low-fluence laser pulses, each of which emits atoms of about 10 -6 monolayers, and found a strong correlation between the laser fluence that can cause emission and the strength of the bond by which the emitted atoms are bound.