Gate-all-around Twin Silicon nanowire SONOS Memory

We have developed gate-all-around (GAA) SONOS with ultra thin twin silicon nanowires for the first time. By using channel hot electron injection (CHEI) and hot hole injection (HHI) mechanisms, program speed of 1 mus at V d = 2 V, V g = 6 V and erase speed of 1 ms at V d = 4.5 V, V g = -6 V are achieved with 2~3 nm nanowire and 30 nm gate. Nanowire size below 10 nm dependencies on V th shift (DeltaV th ) and the program/erase (P/E) characteristics are investigated. As nanowire diameter (d nw ) decreases, faster program speed and larger DeltaV th are observed.