Erratum: "Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films" (Semiconductors 45, 587 (2011))

The following corrections are to be introduced into the paper:1. The sentence “The latter PL band in the photoconductivity spectrum is likely to be caused by the changein the photocurrent sign in this region” (page 591, the righthand column, the 12th li ne from the top) should bereplaced by “The latter is not represented in the phot oconductivity spectrum probably because of the change inthe photocurrent sign in this region”.2. The reference to Fig. 3 on the seventh line in the same column should be changed to reference to Fig. 4.3. In Ref. 3,