Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias

The E{sup {minus}{1/2}} electric field dependence of the saturated density of interface traps in MOS devices is used to improve estimates of charge yield during {sup 60}Co irradiations. Previous discrepancies between 10-keV x-ray and {sup 60}Co response are resolved. 14 refs., 7 figs.