And the method of forming the FinFET

A method comprising: forming a gate stack includes a gate electrode on the first semiconductor fin. The gate electrode includes an upper portion and aligned with the middle of the first semiconductor fin member. A second semiconductor fin member located on one side of the gate electrode, and does not extend to under the gate electrode. The first and second semiconductor fin and spaced apart from each other parallel to each other. A first semiconductor fin member and the end portion of the second semiconductor fin member is etched. An epitaxial, to form an epitaxial region, which extends into a first portion comprising a first end portion spaced from the first to leave a first semiconductor fin member to be etched, as well as extending into the second semiconductor fin etched leaving a second spacer in the second part. Forming a first source / drain region in the epitaxial region. The present invention also provides a method of forming a FinFET and.