Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency,4-1-8 Honcho, Kawaguchi, Saitama 332-0012, JapanReceived June 12, 2009; accepted July 21, 2009; published online August 21, 2009The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO