Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

The cathodoluminescence (CL) depth profiling of the optical emissions from (0001) GaN/GaNbuffer/Al2O3 heterostructures has been performed at 77

Keywords:

• Hexagonal crystal system
• Metalorganic vapour phase epitaxy
• Analytical chemistry
• Cathodoluminescence
• Materials science
• Optoelectronics

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