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A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS
A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS
2020
Cuilin Chen
Tsuyoshi Sugiura
Toshihiko Yoshimasu
Keywords:
Electronic engineering
Amplifier
Optoelectronics
soi cmos
Engineering
Correction
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